Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides

Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides

Xiao-Qin Yu,1,2 Zhen-Gang Zhu,1,3,* Gang Su,3,† and A.-P. Jauho4,‡

1 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 2 Sino-Danish Center for Education and Research, Beijing 100190, China 3 Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, College of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China 4 Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark (Received 4 June 2015; revised manuscript received 5 October 2015; published 8 December 2015)

The spin and valley-dependent anomalous Nernst effects are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g., two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the dip state it is found that carriers with only one spin and from one valley are driven by the temperature gradient